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DEPENDENCE OF THE MOBILITY AND THE CONCENTRATION OF TWO-DIMENSIONAL ELECTRON GAS IN SELECTIVELY DOPED GAAS/N-AL_XGA_1-XAS HETEROSTRUCTURE ON THE ALAS MOLE FRACTIONSAITO J; NANBU K; ISHIKAWA T et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 2; PART. 2; PP. L79-L81; BIBL. 10 REF.Article

MONOLITHIC 1 X 4 ARRAY OF UNIFORM RADIANCE ALGAAS-GAAS LED'S GROWN BY MOLECULAR BEAM EPITAXYSUGAHARA T; WADA O; FUJII T et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 6; PART. 2; PP. 349-350; BIBL. 5 REF.Article

LATERAL UNIFORMITY IN SN OR SI-DOPED N-GAAS GROWN BY MOLECULAR BEAM EPITAXYHIYAMIZU S; FUJII T; NANBU K et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 1; PP. 149-152; BIBL. 9 REF.Article

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Direst fabrication of submicron pattern on GaAs by finely focused ion beam systemOKAMURA, S; TAGUCHI, T; HIYAMIZU, S et al.Fujitsu scientific and technical journal. 1986, Vol 22, Num 2, pp 98-105, issn 0016-2523Article

Influence of MBE growth conditions on persistent photoconductivity effects in N-AlGaAs and selectively doped GaAs/AlGaAs heterostructuresISHIKAWA, T; KONDO, K; HIYAMIZU, S et al.Japanese journal of applied physics. 1985, Vol 24, Num 6, pp L408-L410, issn 0021-4922Article

The effects of tungsten-halogen lamp annealing on a selectively doped GaAs/N-AlGaAs heterostructure grown by MBETATSUTA, S; INATA, T; OKAMURA, S et al.Japanese journal of applied physics. 1984, Vol 23, Num 3, pp L147-L149, issn 0021-4922, 2Article

EFFECT OF H₂ ON THE QUALITY OF SI-DOPED AL_XGA_1-XAS GROWN BY MBEKONDO K; MUTO S; NANBU K et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 2; PART. 2; PP. L121-L123; BIBL. 3 REF.Article

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A field-effect quantum tunneling transistor : observation of negative transconductance and analysisYANG, C. H.Surface science. 1992, Vol 267, Num 1-3, pp 630-633, issn 0039-6028Conference Paper

New epitaxial growth method for modulated structures using Van der Waals interactionsKOMA, A.Surface science. 1992, Vol 267, Num 1-3, pp 29-33, issn 0039-6028Conference Paper

Pseudopotential appraoch to band structure and stability for GaAs/Ge superlatticesITO, T; OHNO, T.Surface science. 1992, Vol 267, Num 1-3, pp 87-89, issn 0039-6028Conference Paper

Self-consistent electronic structure and optical selection rules for tetrahedral quantum dotsSTOPA, M. P.Surface science. 1992, Vol 267, Num 1-3, pp 286-290, issn 0039-6028Conference Paper

COMMENT ON MAGNETOCONDUCTANCE INVESTIGATIONS OF AL_XGA_1-XAS/GAAS HETEROJUNCTION FET IN STRONG MAGNETIC FIELDSSTORMER HL; NARITA S; TAKEYAMA S et al.1981; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. L859-L862; BIBL. DISSEM.Article

Selective area growth of III/V materials in metalorganic molecular beam epitaxy (chemical beam epitaxy)HEINECKE, H.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 18-28, issn 0022-0248Conference Paper

Effect of indium replacement by gallium on InAs/GaAs quantized levelsSATO, M; HORIKOSHI, Y.Surface science. 1992, Vol 267, Num 1-3, pp 195-198, issn 0039-6028Conference Paper

Impurity-related bands in GaAs doped with Ge, Zn, and Se monolayersSAITO, T; IKOMA, T.Surface science. 1992, Vol 267, Num 1-3, pp 57-60, issn 0039-6028Conference Paper

Structure analysis of GaAs-AlAs superlattice grown by molecular beam epitaxyOSAMURA, K; MATSUSHIMA, W; HIYAMIZU, S et al.Japanese journal of applied physics. 1987, Vol 26, Num 3, pp 352-356, issn 0021-4922, 1Article

Heavily Si-doped InGaAs lattice-matched to InP grown by MBEFUJII, T; INATA, T; ISHII, K et al.Electronics Letters. 1986, Vol 22, Num 4, pp 191-192, issn 0013-5194Article

InGaAlAs/InGaAs and InAlAs/InGaAlAs quantum-well structures grown by MBE using pulsed molecular beam methodFUJII, T; NAKATA, Y; MUTO, S et al.Japanese journal of applied physics. 1986, Vol 25, Num 7, pp L598-L600, issn 0021-4922, part 2Article